Features: R-R Mode R-L, R-FT Modes DC Mode• Fast Cycle/Access Time tKHKH / tKHQV tKHKH / tKHQV tKHKH / tKHQV CXK77B3640 -4A 3.8ns / 2.3ns 4.8ns / 4.8ns 4.0ns / 5.2ns -4 3.8ns / 2.3ns 5.3ns / 5.3ns 4.0ns / 5.2ns -45A 3.8ns / 2.3ns 5.3ns / 5.3ns 4.5ns / 6.0ns -454.8ns / 2.5ns 6.5ns / 6.5ns 4...
CXK77B3640GB: Features: R-R Mode R-L, R-FT Modes DC Mode• Fast Cycle/Access Time tKHKH / tKHQV tKHKH / tKHQV tKHKH / tKHQV CXK77B3640 -4A 3.8ns / 2.3ns 4.8ns / 4.8ns 4.0ns / 5.2ns -4 3.8ns / 2.3ns 5.3ns /...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Features: • Fast cycle time: (Cycle) (Frequency) CXK77910ATM/AYM-10 10.0ns 100MHz CXK77910AT...
Features: • Fast cycle time: (Cycle) (Frequency) CXK77910ATM/AYM-10 10.0ns 100MHz CXK77910AT...
Features: • Fast cycle time: (Cycle) (Frequency) CXK77920TM/YM-11 11.0ns 90MHz CXK77920TM/YM...
Item |
Symbol |
Rating |
Unit |
Supply voltage |
VDD |
0.5 to +4.6 |
V |
Output Supply Voltage |
VDD |
0.5 to +4.6 |
V |
Input voltage |
VIN |
-0.5 to VDD+0.5 (4.6V max.) |
V |
Output Supply Voltage |
VOUT |
-0.5 to VDDQ+0.5 (4.6V max.) |
V |
Operating temperature |
TA |
0 to 70 |
|
Junction Temperature |
TJ |
0 to +110 |
|
Storage temperature | TSTG |
-55 to 150 |
|
The CXK77B3640GB is a high speed BiCMOS synchronous static RAM with common I/O pins, organized as 131,072-words by 36-bits. This synchronous SRAM integrates input registers, high speed RAM, output registers/latches, and a one-deep write buffer onto a single monolithic IC. Four different read protocols - Register-Register (R-R), Register-Latch (R-L), Register-Flow Thru (R-FT), and Dual Clock (DC), and an enhanced write protocol - Late (Delayed) Write (LW), are supported, providing a flexible, high-performance user interface.
All input signals except G (Output Enable) and ZZ (Sleep Mode) CXK77B3640GB are registered on the positive edge of K clock.
Read cycles CXK77B3640GB can be controlled in one of four ways - with registered outputs in Register-Register mode, with latched outputs in Register-Latch mode, with flow-through outputs in Register-Flow Thru mode, or with registered outputs using a dedicated output control clock (C clock) in Dual Clock mode. The read protocol is user-selectable through external mode pins M1 and M2.
Write cycles CXK77B3640GB follow a Late Write protocol, where data is provided to the SRAM one clock cycle after the address and control signals, eliminating one dead cycle from Read-to-Write transitions. In this scheme, when a write cycle is initiated, the address and data stored in the SRAM's write buffer during the previous write cycle are directed to the SRAM's memory core, while, simultaneously, the address and data from the current write cycle are stored in the SRAM's write buffer. In both Register-Latch and Register-Flow Thru modes, when SW (Global Write Enable) is driven active, the subsequent positive edge of K clock tristates the SRAM's output drivers immediately, allowing consecutive Read-Write-Read operations. The write cycle is internally self-timed, which eliminates complex off-chip write pulse generation and provides increased flexibility for incoming signals.
The output drivers CXK77B3640GB are series terminated, and the output impedance is programmable through an external impedance matching resistor RQ. By connecting RQ between ZQ and VSS, the output impedance of all 36 DQ pins can be precisely controlled.
Sleep (power down) mode control CXK77B3640GB is provided through the asynchronous ZZ input. 250 MHz operation is obtained from a single 3.3V power supply. JTAG boundary scan interface is provided using a subset of IEEE standard 1149.1 protocol.