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CQ223-2N

Specifications SYMBOL CQ223-2M CQ223-2N UNITS 600 800 V Peak Repetitive Off-State VoltageRMS On-State Current (TC=80°C)Peak One Cycle Surge (t=10ms)I2t Value for Fusing (t=10ms)Peak Gate Power (tp=10µs)Average Gate Power DissipationPeak Gate Current (tp=10&mi...

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SeekIC No. : 004315896 Detail

CQ223-2N: Specifications SYMBOL CQ223-2M CQ223-2N UNITS 600 800 V Peak Repetitive Off-State VoltageRMS On-State Current (TC=80°C)Peak One Cycle Surge (t=10ms)I2t Value for Fus...

CQ223-2N Data Sheet

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Part Number:
CQ223-2N
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Description



Specifications

SYMBOL
CQ223
-2M
CQ223
-2N
UNITS
600
800
V
Peak Repetitive Off-State Voltage
RMS On-State Current (TC=80°C)
Peak One Cycle Surge (t=10ms)
I2t Value for Fusing (t=10ms)
Peak Gate Power (tp=10µs)
Average Gate Power Dissipation
Peak Gate Current (tp=10µs)
Storage Temperature
Junction Temperature
Thermal Resistance
VDRM
IT(RMS)
ITSM
I2t
PGM
PG(AV)
IGM
Tstg
TJ
JA
2.0
20
2.0
3.0
0.2
1.2
-40 to +150
-40 to +125
62.5
A
A
A2s
W
W
A
°C
°C
°C/W



Description

The CENTRAL SEMICONDUCTOR CQ223-2M series type is an Epoxy Molded Silicon Triac designed for full wave AC control applications featuring gate triggering in all four (4) quadrants.




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