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CQ220-25M

Specifications SYMBOL CQ220-25B CQ220-25D CQ220-25M CQ220-25N UNITS 200 400 600 800 V Peak Repetitive Off-State VoltageRMS On-State Current (TC=90°C)Peak One Cycle Surge (t=8.3ms)I2t Value for Fusing (t=8.3ms)Peak Gate Power (tp=10µs)Average Gate...

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SeekIC No. : 004315894 Detail

CQ220-25M: Specifications SYMBOL CQ220-25B CQ220-25D CQ220-25M CQ220-25N UNITS 200 400 600 800 V Peak Repetitive Off-State VoltageRMS On-State Current (TC=90°C)Pea...

CQ220-25M Data Sheet

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Part Number:
CQ220-25M
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Specifications

SYMBOL
CQ220
-25B
CQ220
-25D
CQ220
-25M
CQ220
-25N
UNITS
200
400
600
800
V
Peak Repetitive Off-State Voltage
RMS On-State Current (TC=90°C)
Peak One Cycle Surge (t=8.3ms)
I2t Value for Fusing (t=8.3ms)
Peak Gate Power (tp=10µs)
Average Gate Power Dissipation
Peak Gate Current (tp=10µs)
Peak Gate Voltage (tp=10µs)
Critical Rate of Rise of On-State Current
Repetitive (f=60Hz)
Storage Temperature
Junction Temperature
Thermal Resistance
Thermal Resistance
VDRM
IT(RMS)
ITSM
I2t
PGM
PG (AV)
IGM
VGM

di/dt
Tstg
TJ
JA
JC
25
150
94
40
1.0
10
16

10
-40 to +150
-40 to +125
60
1.7
A
A
A2s
W
W
A
V

A/µs
°C
°C
°C/W
°C/W



Description

The CENTRAL SEMICONDUCTOR CQ220-25B series type is an Epoxy Molded Silicon Triac designed for full wave AC control applications featuring gate triggering in all four (4) quadrants.




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