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CQ220-8M

Specifications SYMBOL CQ220-8B CQ220-8D CQ220-8M CQ220-8N UNITS 200 400 600 800 V Peak Repetitive Off-State VoltageRMS On-State Current (TC=90°C)Peak One Cycle Surge (t=8.3ms)I2t Value for Fusing (t=8.3ms)Peak Gate Power (tp=10µs)Average Gate Powe...

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SeekIC No. : 004315895 Detail

CQ220-8M: Specifications SYMBOL CQ220-8B CQ220-8D CQ220-8M CQ220-8N UNITS 200 400 600 800 V Peak Repetitive Off-State VoltageRMS On-State Current (TC=90°C)Peak One...

CQ220-8M Data Sheet

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Part Number:
CQ220-8M
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Specifications

SYMBOL
CQ220
-8B
CQ220
-8D
CQ220
-8M
CQ220
-8N
UNITS
200
400
600
800
V
Peak Repetitive Off-State Voltage
RMS On-State Current (TC=90°C)
Peak One Cycle Surge (t=8.3ms)
I2t Value for Fusing (t=8.3ms)
Peak Gate Power (tp=10µs)
Average Gate Power Dissipation
Peak Gate Current (tp=10µs)
Peak Gate Voltage (tp=10µs)
Critical Rate of Rise of On-State Current
Repetitive (f=60Hz)
Storage Temperature
Junction Temperature
Thermal Resistance
Thermal Resistance
VDRM
IT(RMS)
ITSM
I2t
PGM
PG (AV)
IGM
VGM

di/dt
Tstg
TJ
JA
JC
8.0
50
10
40
1.0
4.0
16

10
-40 to +150
-40 to +125
60
3.2
A
A
A2s
W
W
A
V

A/µs
°C
°C
°C/W
°C/W



Description

The CENTRAL SEMICONDUCTOR CQ220-8B series type is an Epoxy Molded Silicon Triac designed for full wave AC control applications featuring gate triggering in all four (4) quadrants.




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