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Specifications SYMBOL CQ220-12B CQ220-12D CQ220-12M CQ220-12N UNITS 200 400 600 800 V Peak Repetitive Off-State VoltageRMS On-State Current (TC=90°C)Peak One Cycle Surge (t=8.3ms)I2t Value for Fusing (t=8.3ms)Peak Gate Power (tp=10µs)Average Gate ...

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SeekIC No. : 004315892 Detail

CQ220-12N: Specifications SYMBOL CQ220-12B CQ220-12D CQ220-12M CQ220-12N UNITS 200 400 600 800 V Peak Repetitive Off-State VoltageRMS On-State Current (TC=90°C)Peak...

CQ220-12N Data Sheet

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Part Number:: CQ220-12N
Supply Ability:: 5000

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Upload time: 2024/12/25

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Specifications SYMBOL CQ220-16B CQ220-16D CQ220-16M CQ220-16N UNITS ...
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Specifications SYMBOL CQ220-8B CQ220-8D CQ220-8M CQ220-8N UNITS 200 ...

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Description

Specifications

	SYMBOL	CQ220 -12B	CQ220 -12D	CQ220 -12M	CQ220 -12N	UNITS
	SYMBOL	200	400	600	800	V
Peak Repetitive Off-State Voltage RMS On-State Current (TC=90°C) Peak One Cycle Surge (t=8.3ms) I2t Value for Fusing (t=8.3ms) Peak Gate Power (tp=10µs) Average Gate Power Dissipation Peak Gate Current (tp=10µs) Peak Gate Voltage (tp=10µs) Critical Rate of Rise of On-State Current Repetitive (f=60Hz) Storage Temperature Junction Temperature Thermal Resistance Thermal Resistance	VDRM IT(RMS) ITSM I²t PGM PG (AV) IGM VGM di/dt Tstg TJ JA JC	12 80 27 40 1.0 4.0 16 10 -40 to +150 -40 to +125 60 2.7				A A A²s W W A V A/µs °C °C °C/W °C/W

Description

The CENTRAL SEMICONDUCTOR CQ220-12B series type is an Epoxy Molded Silicon Triac designed for full wave AC control applications featuring gate triggering in all four (4) quadrants.

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CQ220-12N

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