Specifications SYMBOL CQ220-12B CQ220-12D CQ220-12M CQ220-12N UNITS 200 400 600 800 V Peak Repetitive Off-State VoltageRMS On-State Current (TC=90°C)Peak One Cycle Surge (t=8.3ms)I2t Value for Fusing (t=8.3ms)Peak Gate Power (tp=10µs)Average Gate ...
CQ220-12N: Specifications SYMBOL CQ220-12B CQ220-12D CQ220-12M CQ220-12N UNITS 200 400 600 800 V Peak Repetitive Off-State VoltageRMS On-State Current (TC=90°C)Peak...
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SYMBOL |
CQ220 -12B |
CQ220 -12D |
CQ220 -12M |
CQ220 -12N |
UNITS | |
200 |
400 |
600 |
800 |
V | ||
Peak Repetitive Off-State Voltage RMS On-State Current (TC=90°C) Peak One Cycle Surge (t=8.3ms) I2t Value for Fusing (t=8.3ms) Peak Gate Power (tp=10µs) Average Gate Power Dissipation Peak Gate Current (tp=10µs) Peak Gate Voltage (tp=10µs) Critical Rate of Rise of On-State Current Repetitive (f=60Hz) Storage Temperature Junction Temperature Thermal Resistance Thermal Resistance |
VDRM IT(RMS) ITSM I2t PGM PG (AV) IGM VGM di/dt Tstg TJ JA JC |
12 80 27 40 1.0 4.0 16 10 -40 to +150 -40 to +125 60 2.7 |
A A A2s W W A V A/µs °C °C °C/W °C/W |
The CENTRAL SEMICONDUCTOR CQ220-12B series type is an Epoxy Molded Silicon Triac designed for full wave AC control applications featuring gate triggering in all four (4) quadrants.