CPV364M4UPbF

The CPV364M4UPbF is designed as one kind of IGBT SIP modules (ultrafast IGBT). The IGBT technology is the key to Vishay's HPP advanced line of IMS (Insulated Metal  Substrate) power modules. These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET. This superior technology has now been coupled to a state of the art materials system that maximizes power throughput with low thermal resistance. This package is highly suited to motor drive applications and where space is at a premium.

CPV364M4UPbF has six features. (1)Fully isolated printed circuit board mount package. (2)Switching-loss rating includes all "tail" losses. (3)HEXFRED soft ultrafast diodes. (4)Optimized for high speed over 5kHz see fig. 1 for current vs. frequency curve. (5)Totally lead (Pb)-free. (6)Designed and qualified for industrial level. Those are all the main features.

Some absolute maximum ratings of CPV364M4UPbF have been concluded into several points as follow. (1)Its collector to emitter voltage would be 600V. (2)Its continuous collector current, each IGBT would be 20A at Tc=25°C and would be 10A at Tc=100°C. (3)Its pulsed collector current would be 60A. (4)Its clamped inductive load current would be 60A. (5)Its diode continuous forward current would be 9.3A. (6)Its diode maximum forward current would be 60A. (7)Its gate to emitter voltage would be +/-20V. (8)Its isolation voltage would be 2500Vrms. (9)Its maximum power dissipation, each IGBT would be 63W at Tc=25°C and would be 25W at Tc=100°C. (10)Its operating junction and storage temperature range would be from -40°C to +150°C. (11)Its soldering temperature would be 300°C. (12)Its mounting torque would be 5lbf.in to 7lbf.in. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics of CPV364M4UPbF are concluded as follow. (1)Its collector to emitter breakdown voltage would be min 600V. (2)Its temperature coefficient of breakdown voltage would be typ 0.63V/°C. At present we have not got so much information about this IC and we would try hard to get more information about it. If you have any question or suggestion or want to know more information please contact us for details. Thank you!