CPV364M4U

Voltage - Collector Emitter Breakdown (Max): 600V
Input: Standard
NTC Thermistor: No
IGBT Type: -
Series: -
Current - Collector Cutoff (Max): 250µA
Mounting Type: Through Hole
Current - Collector (Ic) (Max): 20A
Configuration: Three Phase Inverter
Manufacturer: Vishay Semiconductors
Package / Case: 19-SIP (13 Leads), IMS-2
Supplier Device Package: IMS-2
Power - Max: 63W
Vce(on) (Max) @ Vge, Ic: 1.84V @ 15V, 20A
Input Capacitance (Cies) @ Vce: 2.1nF @ 30V


Features:

• Fully isolated printed circuit board mount package
• Switching-loss rating includes all "tail" losses
• HEXFREDTM soft ultrafast diodes
• Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve


Specifications

	Parameter	Max.	Units
VCES	Collector-to-Emitter Voltage	600	V
IC @ TC  = 25°C	Continuous Collector Current each IGBT	20	A
IC @ TC = 100	Continuous Collector Currenteach IGBT	10	A
ICM	Pulsed Collector Current	60	A
ILM	Clamped Inductive Load Current	60	A
IF @ TC = 100	Diode Continuous Forward Current	60	A
IFM	Diode Maximum Forward Current	9.3	A
VGE	Gate-to-Emitter Voltage	±20	V
VISOL	Isolation Voltage, any terminal to case, 1 min	2500	VRMS
PD @ TC = 25	Maximum Power Dissipation, each IGBT	63	W
PD @ TC = 100	Maximum Power Dissipation, each IGBT	25	W
TJ TSTG	Operating Junction and Storage Temperature Range	-55 to +150
	Soldering Temperature, for 10 sec.	300 (0.063 in. (1.6mm) from case)
	Mounting torque, 6-32 or M3 screw.	5-7 lbf•in ( 0.55-0.8 N•m)

Description

The IGBT technology is the key to International Rectifier's advanced line of IMS (Insulated Metal Substrate) Power Modules. CPV364M4U are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET.

This superior technology CPV364M4U has now been coupled to a state of the art materials system that maximizes power throughput with low thermal resistance. This package is highly suited to motor drive applications and where space is at a premium.