Features: • Fully isolated printed circuit board mount package• Switching-loss rating includes all tail losses• HEXFREDTM soft ultrafast diodes• Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curveSpecifications Parameter...
CPV363MF: Features: • Fully isolated printed circuit board mount package• Switching-loss rating includes all tail losses• HEXFREDTM soft ultrafast diodes• Optimized for medium operat...
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Parameter | Max. | Units | |
VCES | Collector-to-Emitter Voltage | 600 | V |
IC @ TC = 25°C | Continuous Collector Current each IGBT | 16 | A |
IC @ TC = 100 | Continuous Collector Currenteach IGBT | 8.7 | A |
ICM | Pulsed Collector Current | 50 | A |
ILM | Clamped Inductive Load Current | 50 | A |
IF @ TC = 100 | Diode Continuous Forward Current | 6.1 | A |
IFM | Diode Maximum Forward Current | 50 | A |
VGE | Gate-to-Emitter Voltage | ±20 | V |
VISOL | Isolation Voltage, any terminal to case, 1 min | 2500 | VRMS |
PD @ TC = 25 | Maximum Power Dissipation, each IGBT | 36 | W |
PD @ TC = 100 | Maximum Power Dissipation, each IGBT | 14 | W |
TJ TSTG |
Operating Junction and Storage Temperature Range |
-40 to +150 | |
Soldering Temperature, for 10 sec. | 300 (0.063 in. (1.6mm) from case) | ||
Mounting torque, 6-32 or M3 screw. | 5-7 lbf?in ( 0.55-0.8 N?m) |
The IGBT technology is the key to International Rectifier's advanced line ofIMS (Insulated Metal Substrate) Power Modules. CPV363MF are moreefficient than comparable bipolar transistor modules, while at the same timehaving the simpler gate-drive requirements of the familiar power MOSFET.This superior technology has now been coupled to a state of the art materialssystem that maximizes power throughput with low thermal resistance. Thispackage is highly suited to motor drive applications and where space is at apremium.