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CPV362MM

Features: • Short Circuit Rated - 10µs @ 125, V GE = 15V Fully isolated printed circuit board mount package• Switching-loss rating includes all tail losses• HEXFREDTM soft ultrafast diodes• Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current...

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SeekIC No. : 004315875 Detail

CPV362MM: Features: • Short Circuit Rated - 10µs @ 125, V GE = 15V Fully isolated printed circuit board mount package• Switching-loss rating includes all tail losses• HEXFREDTM soft ...

CPV362MM Data Sheet

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Part Number:
CPV362MM
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Description



Features:

• Short Circuit Rated - 10µs @ 125, V GE = 15V Fully isolated printed circuit board mount package
• Switching-loss rating includes all "tail" losses
• HEXFREDTM soft ultrafast diodes
• Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve


Specifications

  Parameter Max. Units
VCES Collector-to-Emitter Voltage 600 V
IC @ TC  = 25°C Continuous Collector Current each IGBT 7.9 A
IC @ TC = 100 Continuous Collector Currenteach IGBT 4.6 A
ICM Pulsed Collector Current 16 A
ILM Clamped Inductive Load Current 16 A
IF @ TC = 100 Diode Continuous Forward Current 3.4 A
IFM Diode Maximum Forward Current 16 A
tsc Short Circuit Withstand Time 10 µs
VGE Gate-to-Emitter Voltage ±20 V
VISOL Isolation Voltage, any terminal to case, 1 min 2500 VRMS
PD @ TC = 25 Maximum Power Dissipation, each IGBT 23 W
PD @ TC = 100 Maximum Power Dissipation, each IGBT 9.1 W
TJ
TSTG		 Operating Junction and
Storage Temperature Range		 -40 to +150
  Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
  Mounting torque, 6-32 or M3 screw. 5-7 lbf?in ( 0.55-0.8 N?m)  



Description

The IGBT technology is the key to International Rectifier's advanced line of IMS (Insulated Metal Substrate) Power Modules. CPV362MM are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET. This superior technology has now been coupled to a state of the art materials system that maximizes power throughput with low thermal resistance. This package is highly suited to power applications and where space is at a premium.




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