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CMT2N7002

Features: High Density Cell Design for Low RDS(ON) Voltage Controlled Small Signal Switch Rugged and Reliable High Saturation Current Capability PinoutSpecificationsDescriptionThis N-Channel enhancement mode CMT2N7002 field effect transistor isproduced using high cell density, DMOS technology. The...

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SeekIC No. : 004315030 Detail

CMT2N7002: Features: High Density Cell Design for Low RDS(ON) Voltage Controlled Small Signal Switch Rugged and Reliable High Saturation Current Capability PinoutSpecificationsDescriptionThis N-Channel enhance...

CMT2N7002 Data Sheet

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Part Number:
CMT2N7002
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

 High Density Cell Design for Low RDS(ON)
Voltage Controlled Small Signal Switch 
Rugged and Reliable 
High Saturation Current Capability


Pinout

Connection Diagram


Specifications

Connection Diagram


Description

This N-Channel enhancement mode CMT2N7002 field effect transistor isproduced using high cell density, DMOS technology. These
products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching
performance. CMT2N7002 can be used in most applications requiring up to 115mA DC and can deliver pulsed currents up to
800mA. This product is particularly suited for low voltage, low current applications such as small servo motor control,
power MOSFET gate drivers, and other switching applications. 
 


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