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CMT20N15

Features: Robust High Voltage Termination Avalanche Energy Specified Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits IDSS and VDS(on) Specified at Elevated TemperatureSpecifications Rating Symbol Value Un...

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SeekIC No. : 004315028 Detail

CMT20N15: Features: Robust High Voltage Termination Avalanche Energy Specified Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circui...

CMT20N15 Data Sheet

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Part Number:
CMT20N15
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Description



Features:

Robust High Voltage Termination
Avalanche Energy Specified
Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature




Specifications

Rating Symbol Value Unit
Drain to Current -Continuous
-Pulsed
 ID
IDM
 20
60
 A
Gate-to-Source Voltage - Continue
- Non-repetitive
 VGS
VGSM
 ±20
±32
 V
V
Total Power Dissipation
Derate above 25
 PD 112
0.9
 W
W/
Operating and Storage Temperature Range TJ, TSTG -55 to 150
Single Pulse Drain-to-Source Avalanche Energy - TJ = 25
(VDD = 100V, VGS = 10V, IL = 20A, L = 10mH, RG = 25)
 EAS
 60
 mJ
Thermal Resistance - Junction to Case
-Junction to Ambient
 JC
JA
 1.1
62.5
 /W
Maximum Lead Temperature for Soldering Purposes, 1/8" from case for 10 seconds TL 260



Description

CMT20N15 Power MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design CMT20N15 also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, CMT20N15 are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients.




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