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CMT20N50

Features: ·Robust High Voltage Termination·Avalanche Energy Specified·Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode·Diode is Characterized for Use in Bridge Circuits·IDSS and VDS(on) Specified at Elevated Temperature·Isolated Mounting Hole Reduces Mounting Hardwa...

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SeekIC No. : 004315029 Detail

CMT20N50: Features: ·Robust High Voltage Termination·Avalanche Energy Specified·Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode·Diode is Characterized for Use in Bridge Circui...

CMT20N50 Data Sheet

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Part Number:
CMT20N50
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/22

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Product Details

Description



Features:

·Robust High Voltage Termination
·Avalanche Energy Specified
·Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
·Diode is Characterized for Use in Bridge Circuits
·IDSS and VDS(on) Specified at Elevated Temperature
·Isolated Mounting Hole Reduces Mounting Hardware


Specifications

Rating Symbol Value Unit
Drain to Current - Continuous
- Pulsed		 ID
IDM		 20
60		 A
Gate-to-Source Voltage - Continue
- Non-repetitive		 VGS
VGSM		 ±20
±40		 V
V
Total Power Dissipation
Derate above 25		 PD 250
2.00		 W
W/
Operating and Storage Temperature Range TJ, TSTG -55 to 150
Single Pulse Drain-to-Source Avalanche Energy - TJ = 25
(VDD = 100V, VGS = 10V, IL = 20A, L = 1.38mH, RG = 25Ω)		 EAS 276 mJ
Thermal Resistance - Junction to Case
- Junction to Ambient		 JC
JA		 0.50
40		 /W
Maximum Lead Temperature for Soldering Purposes, 1/8" from case for 10 seconds TL 260
(1) Pulse Width and frequency is limited by TJ(max) and thermal response


Description

This high voltage MOSFET CMT20N50 uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, CMT20N50 are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients.




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