Transistors Bipolar (BJT) Dual - NPN/PNP
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Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 30 V at NPN, 50 V at PNP |
Emitter- Base Voltage VEBO : | 4.5 V at NPN, 3 V at PNP | Maximum DC Collector Current : | 0.05 A |
DC Collector/Base Gain hfe Min : | 300 at 0.1 mA at 5 V | Configuration : | Dual |
Maximum Operating Frequency : | 50 MHz at NPN, 40 MHz at PNP | Maximum Operating Temperature : | + 150 C |
Mounting Style : | SMD/SMT | Package / Case : | SOT-363 |
Packaging : | Reel |
SYMBOL | NPN | PNP | UNITS | ||
Collector-Base Voltage | VCBO | 35 | 50 | V | |
Collector-Emitter Voltage | VCEO | 30 | 50 | V | |
Emitter-Base Voltage | VEBO |
4.5 |
3.0 | V | |
Collector Current | IC | 50 | mA | ||
Power Dissipation | PD | 350 | mW | ||
Operating and Storage | |||||
Junction Temperature | TJ,Tstg | -65 to +150 | °C | ||
Thermal Resistance | JA | 357 | °C/W |