Transistors Bipolar (BJT) Dual PNP
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Transistor Polarity : | PNP | Collector- Emitter Voltage VCEO Max : | 60 V |
Emitter- Base Voltage VEBO : | 5 V | Maximum DC Collector Current : | 0.6 A |
DC Collector/Base Gain hfe Min : | 50 | Configuration : | Dual |
Maximum Operating Frequency : | 200 MHz | Maximum Operating Temperature : | + 150 C |
Mounting Style : | SMD/SMT | Package / Case : | SOT-363 |
Packaging : | Reel |
SYMBOL | UNITS | ||
Collector-Base Voltage | VCBO | 60 | V |
Collector-Emitter Voltage | VCEO | 60 | V |
Emitter-Base Voltage | VEBO | 5.0 | V |
Collector Current | IC | 600 | mA |
Power Dissipation | PD | 350 | mW |
Operating and Storage | |||
Junction Temperature | TJ,Tstg | -65 to +150 | °C |
Thermal Resistance | JA | 357 | °C/W |