CMKT2207

Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Packaging : Reel
Emitter- Base Voltage VEBO : 6 V
Transistor Polarity : NPN/PNP
Configuration : Dual
Package / Case : SOT-363
Maximum DC Collector Current : 0.6 A
DC Collector/Base Gain hfe Min : 35 at 0.1 mA at 10 V
Maximum Operating Frequency : 300 MHz at NPN, 200 MHz at PNP
Collector- Emitter Voltage VCEO Max : 40 V at NPN, 60 V at PNP


Specifications

	SYMBOL	NPN (Q1)		PNP (Q2)	UNITS
Collector-Base Voltage	VCBO	75		60	V
Collector-Emitter Voltage	VCEO	40		60	V
Emitter-Base Voltage	VEBO	6.0		5.0	V
Collector Current	IC		600		mA
Power Dissipation	PD		350		mW
Operating and Storage
Junction Temperature	TJ,Tstg		-65 to +150		°C
Thermal Resistance	JA		357		°C/W

Description

The CENTRAL SEMICONDUCTOR CMKT2207 type is a dual complementary silicon transistor manufactured by the epitaxial planar process, epoxy molded in a ULTRAmini™ surface mount package, designed for small signal general purpose and switching applications.