CHA5390TBF

Features:

·Broadband performance: 24-30GHz
·Small signal gain 21dB (typical)
·Output power (P_-1dB) 24dBm (typical)
·Low DC power consumption: 460mA
·SMD leadless package
·Dimensions: 6.35 x 6.35 x 0.97 mm³


Specifications

Symbol	Parameter	Values	Unit
Vd	Drain bias voltage	6.0	V
Id	Drain bias current	720	mA
Vg	Gate bias voltage	-2.0 to +0.4	V
Pin	Maximum peak input power overdrive (2)	+15	dBm
Ta	Operating temperature range (3)	-40 to +70
Tstg	Storage temperature range	-55 to +155

Description

The monolithic microwave IC (MMIC) in the package is a high gain broadband fourstage monolithic medium power amplifier. CHA5390TBF is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a PM-HEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.

CHA5390TBF is supplied in a new SMD leadless chip carrier.