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CHA5010b

Features: ·Broadband performance : 9-10.5GHz·27dBm output power (pulsed meas., -1dB gain compression)·15dB gain·± 1.5dB gain flatness·Chip size : 2,09 x 1,27 x 0.10 mmSpecifications Symbol Parameter Values Unit Vd Positive supply voltage Positive supply voltage V Pdiss Maximum po...

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SeekIC No. : 004313397 Detail

CHA5010b: Features: ·Broadband performance : 9-10.5GHz·27dBm output power (pulsed meas., -1dB gain compression)·15dB gain·± 1.5dB gain flatness·Chip size : 2,09 x 1,27 x 0.10 mmSpecifications Symbol Par...

CHA5010b Data Sheet

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Part Number:
CHA5010b
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Description



Features:

·Broadband performance : 9-10.5GHz
·27dBm output power (pulsed meas., -1dB gain compression)
·15dB gain
·± 1.5dB gain flatness
·Chip size : 2,09 x 1,27 x 0.10 mm


Specifications

Symbol Parameter Values Unit
Vd Positive supply voltage Positive supply voltage V
Pdiss Maximum power dissipated 7.0 @ Ta = +25
4.3 @ Ta = +70		 W
Vg Negative supply voltage -3.5 to 0 V
Pin Maximum peak input power overdrive (2) +20 dBm
Ta Operating temperature range -25 to +70
Tstg Storage temperature range -55 to +125



Description

This CHA5010b is a two-stage monolithic driver amplifier.

CHA5010b is manufactured with a standard MESFET process : via holes through the substrate, air bridges and electron beam gate lithography.

CHA5010b is available in chip form.


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