CHA5093

Features:

· Performances : 22-26GHz
· 29dBm output power
·20 dB ± 1.5dB gain
· DC power consumption, 600mA @ 6V
· Chip size : 3.27 x 2.47 x 0.10 mm


Specifications

Symbol	Parameter	Min	Typ	Max	Unit
Fop	Operating frequency range	22		26	GHz
G	Small signal gain	18	20		dB
P1dB	Output power at 1dB gain compression	28	29		dBm
Id	Bias current		600	900	mA

Description

The CHA5093 is a high gain three-stage monolithic high power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounds. This helps simplify the assembly process.

CHA5093 is manufactured with a PM-HEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.

CHA5093 is available in chip form.