CHA5093TCF

Features:

·Performances: 24-26GHz
·Gain = 19dB (typical)
·Output power (P-1dB) 29dBm (typical)
·SMD leadless package
·Dimensions: 6.35 x 6.35 x 0.97 mm3


Specifications

Symbol	Parameter	Values	Unit
Vds	Drain bias voltage_small signal	6.0	V
Ids	Drain bias current_small signal	1200	mA
Vgs	Gate bias voltage	-2 to +0.4	V
Vdg	Negative Drain Gate voltage (= Vds Vgs)	+8	V
Pin	Maximum peak input power overdrive (3)	+12	dBm
Ta	Operating temperature range (4)	-40 to +70
Tstg	Storage temperature range	-55 to +155

Description

The packaged monolithic microwave IC (MMIC) is a high gain three-stage monolithic high power amplifier. CHA5093TCF is designed for a wide range of applications, from military to commercial communication systems.

CHA5093TCF is manufactured with a PMHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in a new SMD leadless chip carrier.