CHA5390

Features:

• Broadband performances : 24-30GHz
• 25dBm output power.
• 24dB gain
• Good broadband matchings
• Low DC power consumption, 460mA @ 5V
• Chip size : 2.99 X 1.31 X 0.10 mm


Specifications

Symbol	Parameter	Values	Unit
Vd	Drain bias voltage	6.0	V
Id	Drain bias current	720	mA
Vg	Gate bias voltage	-2.0 to +0.4	V
Pin	Maximum peak input power overdrive (2)	+15	dBm
Ta	Operating temperature range	-40 to +85
Tstg	Storage temperature range	-55 to +155

Description

The CHA5390 is a high gain broadband fourstage monolithic medium power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounded. This helps simplify the assembly process.

CHA5390 is manufactured with a PM-HEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.

CHA5390 is available in chip form.