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CHA5297

Features: ·Performances : 37-40GHz·28dBm output power @ 1dB comp. gain·10 dB ± 1dB gain·DC power consumption, 1.6A @ 3.5V·Chip size : 4.16 x 2.6 x 0.05 mmSpecifications Symbol Parameter Values Unit Vd Maximum drain bias voltage with Pin max=18dBm +4.0 V Id Maximum drain bias curr...

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CHA5297: Features: ·Performances : 37-40GHz·28dBm output power @ 1dB comp. gain·10 dB ± 1dB gain·DC power consumption, 1.6A @ 3.5V·Chip size : 4.16 x 2.6 x 0.05 mmSpecifications Symbol Parameter Value...

CHA5297 Data Sheet

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Part Number:
CHA5297
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/18

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Product Details

Description



Features:

·Performances : 37-40GHz
·28dBm output power @ 1dB comp. gain
·10 dB ± 1dB gain
·DC power consumption, 1.6A @ 3.5V
·Chip size : 4.16 x 2.6 x 0.05 mm


Specifications

Symbol Parameter Values Unit
Vd Maximum drain bias voltage with Pin max=18dBm +4.0 V
Id Maximum drain bias current 2.2 A
Vg Gate bias voltage -2 to +0.4 V
Ig Gate bias current -5.5 to +5.5 mA
Vdg Maximum drain to gate voltage (Vd - Vg) +6.0

 V
Pin Maximum input power overdrive (2) +22 dBm
Tch Maximum channel temperature +175
Ta Operating temperature range -40 to +80
Tstg Storage temperature range -55 to +125



Description

The CHA5297 is a three-stage monolithic high power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounds. This helps simplify the assembly process.

CHA5297 is manufactured with a PM-HEMT process, 0.15µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.

CHA5297 is available in chip form.




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