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CHA5296

Features: ·Performances : 27-30GHz·29dBm output power @ 1dB comp. gain·15 dB ± 1dB gain·DC power consumption, 850mA @ 6V·Chip size : 3.80 x 2.52 x 0.05 mmSpecifications Symbol Parameter Values Unit Vd Drain bias voltage 6.25 V Id Drain bias current 1450 mA Vg Gate bias volt...

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SeekIC No. : 004313406 Detail

CHA5296: Features: ·Performances : 27-30GHz·29dBm output power @ 1dB comp. gain·15 dB ± 1dB gain·DC power consumption, 850mA @ 6V·Chip size : 3.80 x 2.52 x 0.05 mmSpecifications Symbol Parameter Value...

CHA5296 Data Sheet

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Part Number:
CHA5296
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Description



Features:

·Performances : 27-30GHz
·29dBm output power @ 1dB comp. gain
·15 dB ± 1dB gain
·DC power consumption, 850mA @ 6V
·Chip size : 3.80 x 2.52 x 0.05 mm


Specifications

Symbol Parameter Values Unit
Vd Drain bias voltage 6.25 V
Id Drain bias current 1450 mA
Vg Gate bias voltage -2.5 to +0.4 V
Vgd Negative gate drain voltage ( = Vg - Vd) -8 V
Pin Maximum peak input power overdrive (2) +18 dBm

Ta		 Operating temperature range -40 to +80
Tstg Storage temperature range -55 to +125



Description

The CHA5296 is a high gain three-stage monolithic high power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounds. This helps simplify the assembly process.

CHA5296 is manufactured with a PM-HEMT process on 50µm substrate thickness, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.

CHA5296 is available in chip form.




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