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BUZ11A

MOSFET N-Ch 50 Volt 26 Amp

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SeekIC No. : 00166718 Detail

BUZ11A: MOSFET N-Ch 50 Volt 26 Amp

BUZ11A Data Sheet

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Part Number:
BUZ11A
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/9/27

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 50 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 26 A
Resistance Drain-Source RDS (on) : 0.055 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220
Drain-Source Breakdown Voltage : 50 V
Resistance Drain-Source RDS (on) : 0.055 Ohms
Continuous Drain Current : 26 A


Features:

• N channel
• Enhancement mode
• Avalanche-rated


Specifications

Parameter Symbol Values Unit
Continuous drain current
TC =25
 ID 26 A
Pulsed drain current
TC = 25 		IDpuls 104
Avalanche current,limited by Tjmax IAR 30
Avalanche energy,periodic limited by Tjmax
 EAR

1.9

 mJ

Avalanche energy, single pulse
ID =30A, VDD =25V, RGS = 25
L=15.6 H,Tj = 25

EAS 14
Gate source voltage VGS ± 20 V
Power dissipation
TC = 25		 Ptot 75 W
Operating temperature Tj -55 ... + 150
Storage temperature Tstg -55 ... + 150
Thermal resistance, chip case RthJC 1.67 K/W
Thermal resistance, chip to ambient RthJA 75
DIN humidity category, DIN 40 040 E
IEC climatic category, DIN IEC 68-1 55 / 150 / 56



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