Specifications Parameter Symbol Values Unit Continuous drain current TC = 23 °C ID 60 A Pulsed drain currentTC = 25 °C IDpuls 240 Avalanche energy, single pulseID = 40 A, VDD = 25 V, RGS = 25 ΩL = 63 µH, Tj= 25 °C EAS 250 mJ Reverse diode dv/dtIS = 40 A, V...
BUZ100: Specifications Parameter Symbol Values Unit Continuous drain current TC = 23 °C ID 60 A Pulsed drain currentTC = 25 °C IDpuls 240 Avalanche energy, single pulseID = 40 A, VDD ...
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Parameter | Symbol | Values | Unit |
Continuous drain current TC = 23 °C |
ID | 60 |
A |
Pulsed drain current TC = 25 °C |
IDpuls | 240 | |
Avalanche energy, single pulse ID = 40 A, VDD = 25 V, RGS = 25 Ω L = 63 µH, Tj= 25 °C |
EAS | 250 |
mJ |
Reverse diode dv/dt IS = 40 A, VDS = 40 V, diF/dt = 200 A/µs Tjmax = 175 °C |
dv/dt | 6 |
kV/µs |
Gate source voltage | VGS | ± 20 | V |
Power dissipation TC = 25 °C |
Ptot | 250 |
W |
Operating temperature | Tj | -55 ... + 175 | °C |
Storage temperature | Tstg | -55 ... + 175 | |
Thermal resistance, chip case | RthJC | 0.6 | K/W |
Thermal resistance, chip to ambient | RthJA | 75 | |
DIN humidity category, DIN 40 040 | E | ||
IEC climatic category, DIN IEC 68-1 | 55 / 175 / 56 |