Position: Home  > All Categories> Integrated Circuits (ICs) > BUZ10

BUZ10

MOSFET N-Ch 50 Volt 23 Amp

product image

BUZ10 Picture
See larger image
SeekIC No. : 00161657 Detail

BUZ10: MOSFET N-Ch 50 Volt 23 Amp

BUZ10 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
BUZ10
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/12/21

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 50 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 23 A
Resistance Drain-Source RDS (on) : 0.06 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220
Drain-Source Breakdown Voltage : 50 V
Continuous Drain Current : 23 A
Resistance Drain-Source RDS (on) : 0.06 Ohms


Features:

• N channel
• Enhancement mode
• Avalanche-rated


Specifications

Parameter Symbol Values Unit
Continuous drain current
TC =26
 ID 23 A
Pulsed drain current
TC = 25 		IDpuls 92
Avalanche current,limited by Tjmax IAR 23
Avalanche energy,periodic limited by Tjmax
 EAR

1.3

 mJ

Avalanche energy, single pulse
ID =23A, VDD =25V, RGS = 25
L=15.1 H,Tj = 25

EAS 8
Gate source voltage VGS ± 20 V
Power dissipation
TC = 25		 Ptot 75 W
Operating temperature Tj -55 ... + 150
Storage temperature Tstg -55 ... + 150
Thermal resistance, chip case RthJC 1.67 K/W
Thermal resistance, chip to ambient RthJA 75
DIN humidity category, DIN 40 040 E
IEC climatic category, DIN IEC 68-1 55 / 150 / 56



Parameters:

Technical/Catalog InformationBUZ10
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)50V
Current - Continuous Drain (Id) @ 25° C23A
Rds On (Max) @ Id, Vgs70 mOhm @ 14A, 10v
Input Capacitance (Ciss) @ Vds 900pF @ 25V
Power - Max75W
PackagingTube
Gate Charge (Qg) @ Vgs-
Package / CaseTO-220-3 (Straight Leads)
FET FeatureStandard
Drawing Number*
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names BUZ10
BUZ10
497 2728 5 ND
49727285ND
497-2728-5



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Line Protection, Backups
BX0023
A20B-1008-0550
Switches
US32DMRJ
HBGQ22P-11ET
Sensors, Transducers
GP2Y0D340K
PAN3509DH-TXWA
Optoelectronics
SFH7770
TLP423J
Computers, Office - Components, Accessories
DS-4008HCI
LB104V03(A1)
Transformers
TM-09210
BV222-1-00992
View more