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BUZ111SL

Features: • N channel• Enhancement mode• Logic Level• Avalanche-rated• dv/dt rated• 175 operating temperature• also in SMD availableSpecifications Parameter Symbol Values Unit Continuous drain currentTC = 100 ID 80 A Pulsed drain currentTC...

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BUZ111SL: Features: • N channel• Enhancement mode• Logic Level• Avalanche-rated• dv/dt rated• 175 operating temperature• also in SMD availableSpecifications Para...

BUZ111SL Data Sheet

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Part Number:
BUZ111SL
Supply Ability:
5000

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Product Details

Description



Features:

• N channel
• Enhancement mode
• Logic Level
• Avalanche-rated
• dv/dt rated
• 175 operating temperature
• also in SMD available


Specifications

Parameter Symbol Values Unit
Continuous drain current

TC = 100		 ID 80 A
Pulsed drain current
TC = 25		 IDpuls 320
Avalanche energy, single pulse
ID =80A, VDD = 25 V, RGS = 25
L =220H, Tj = 25		 EAS 700 mJ
Avalanche current,limited by Tjmax IAR 80 A
Avalanche energy,periodic limited by Tjmax EAR 25 mJ
Reverse diode dv/dt
IS =80 A, VDS = 40 V, diF/dt = 200 A/s
Tjmax = 175		 dv/dt 6 kV/s
Gate source voltage VGS ± 14 V
Power dissipation
TC = 25		 Ptot 75 W



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