Specifications Parameter Symbol Values Unit Continuous drain current TC = 23 °C ID 40 A Pulsed drain currentTC = 25 °C IDpuls 160 Avalanche energy, single pulseID = 40 A, VDD = 25 V, RGS = 25 ΩL = 63 µH, Tj= 25 °C EAS 100 mJ Reverse diode...
BUZ103: Specifications Parameter Symbol Values Unit Continuous drain current TC = 23 °C ID 40 A Pulsed drain currentTC = 25 °C IDpuls 160 Avalanche energy, single pulseID = 40 ...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Parameter |
Symbol |
Values |
Unit |
Continuous drain current TC = 23 °C |
ID |
40 |
A |
Pulsed drain current TC = 25 °C |
IDpuls |
160 | |
Avalanche energy, single pulse ID = 40 A, VDD = 25 V, RGS = 25 Ω L = 63 µH, Tj= 25 °C |
EAS |
100 |
mJ |
Reverse diode dv/dt IS = 40 A, VDS = 40 V, diF/dt = 200 A/µs Tjmax = 175 °C |
dv/dt |
6 |
kV/µs |
Gate source voltage | VGS |
± 20 |
V |
Power dissipation TC = 25 °C |
Ptot |
120 |
W |
Operating temperature | Tj |
-55 ... + 175 |
°C |
Storage temperature | Tstg |
-55 ... + 175 | |
Thermal resistance, chip case | RthJC |
1.25 |
K/W |
Thermal resistance, chip to ambient | RthJA |
75 | |
DIN humidity category, DIN 40 040 | E |
||
IEC climatic category, DIN IEC 68-1 | 55 / 175 / 56 |