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BUZ101

Features: • N channel• Enhancement mode• Avalanche-rated• dv/dt rated• Low on-resistance• 175 operating temperature• also in TO-220 SMD availableSpecifications Parameter Symbol Values Unit Continuous drain currentTC = 31 ID 29 A Pulsed dra...

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SeekIC No. : 004304879 Detail

BUZ101: Features: • N channel• Enhancement mode• Avalanche-rated• dv/dt rated• Low on-resistance• 175 operating temperature• also in TO-220 SMD availableSpecificati...

BUZ101 Data Sheet

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Part Number:
BUZ101
Supply Ability:
5000

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Product Details

Description



Features:

• N channel
• Enhancement mode
• Avalanche-rated
• dv/dt rated
• Low on-resistance
• 175 operating temperature
• also in TO-220 SMD available


Specifications

Parameter Symbol Values Unit
Continuous drain current
TC = 31		 ID 29 A
Pulsed drain current
TC = 25		 IDpuls 16
Avalanche energy, single pulse
ID = 29 A, VDD = 25 V, RGS = 25
L = 83 H, Tj = 25
 EAS

70

 mJ
Reverse diode dv/dt
IS = 29 A, VDS = 40 V, diF/dt = 200 A/s
Tjmax = 175		 dv/dt 6 kV/s
Gate source voltage VGS ± 20 V
Power dissipation
TC = 25		 Ptot 100 W
Operating temperature Tj -55 ... + 175
Storage temperature Tstg -55 ... + 175
Thermal resistance, chip case RthJC 1.5 K/W
Thermal resistance, chip to ambient RthJA 75
DIN humidity category, DIN 40 040 E
IEC climatic category, DIN IEC 68-1 55 / 150 / 56



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