Transistors Bipolar (BJT) Hi Vltg Fast Swtchng NPN Pwr Transistor
BULD1101ET4: Transistors Bipolar (BJT) Hi Vltg Fast Swtchng NPN Pwr Transistor
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Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 450 V |
Emitter- Base Voltage VEBO : | 12 V | Maximum DC Collector Current : | 3 A |
DC Collector/Base Gain hfe Min : | 20 | Maximum Operating Temperature : | + 150 C |
Mounting Style : | SMD/SMT | Package / Case : | DPAK |
Packaging : | Reel |
Symbol | Parameter | Value | Unit |
VCES | Collector-Emitter Voltage (VBE = 0) | 1100 | V |
VCEO | Collector-Emitter Voltage (IB = 0) | 450 | V |
VEBO | Emitter-Base Voltage (IC = 0) | 12 | V |
IC | Collector Current | 3 | A |
ICM | Collector Peak Current (tp <5 ms) | 6 | A |
IB | Base Current | 1.5 | A |
IBM | Base Peak Current (tp <5 ms) | 3 | A |
Ptot | Total Dissipation at Tc = 25 | 35 | W |
Tstg | Storage Temperature | -65 to 150 | |
Tj | Max. Operating Junction Temperature | 150 |
BULD1101ET4 is manufactured using High Voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA.