Features: · HIGH VOLTAGE CAPABILITY· LOW SPREAD OF DYNAMIC PARAMETERS· MINIMUM LOT-TO-LOT SPREAD FOR RELIABLEOPERATION· VERY HIGH SWITCHING SPEEDApplication· ELECTRONIC BALLASTSFOR FLUORESCENT LIGHTING· FLYBACKAND FORWARD SINGLE TRANSISTOR LOWPOWER CONVERTERSSpecifications Symbol Paramet...
BULD118-1: Features: · HIGH VOLTAGE CAPABILITY· LOW SPREAD OF DYNAMIC PARAMETERS· MINIMUM LOT-TO-LOT SPREAD FOR RELIABLEOPERATION· VERY HIGH SWITCHING SPEEDApplication· ELECTRONIC BALLASTSFOR FLUORESCENT LIGHT...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
· HIGH VOLTAGE CAPABILITY
· LOW SPREAD OF DYNAMIC PARAMETERS
· MINIMUM LOT-TO-LOT SPREAD FOR RELIABLEOPERATION
· VERY HIGH SWITCHING SPEED
· ELECTRONIC BALLASTSFOR FLUORESCENT LIGHTING
· FLYBACKAND FORWARD SINGLE TRANSISTOR LOWPOWER CONVERTERS
Symbol |
Parameter |
Value
|
Unit |
VCES |
Collector-Emitter Voltage (VBE=0) |
700 |
V |
VCEO |
emitter-base voltage(IB = 0) |
400 |
V |
VEBO |
Emitter-Base Voltage (IC = 0) |
9 |
V |
IC |
Collector Current |
2 |
A |
ICM |
Collector Peak Current (tP < 5 ms) |
4 |
A |
IB |
Base Current |
1 |
A |
IBM |
Base Peak Current (tP < 5 ms) |
2 |
A |
Ptot |
Total Dissipation at TC = 25 °C |
20 |
W |
Tstg |
Storage Temperature |
-65 to 150 |
°C |
Tj |
Max. Operating Junction Temperature |
150 |
°C |
BULD118-1 is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability.
BULD118-1 uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.
BULD118-1 is designed for use in lighting applications and low cost switch-mode power supplies.