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BULD1101E

Features: High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed In compliance with the 2002/93/EC European DirectiveApplicationElectronic ballast for fluorescent lightingSpecifications Symbol Parameter Valu...

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SeekIC No. : 004304571 Detail

BULD1101E: Features: High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed In compliance with the 2002/93/EC European DirectiveApp...

BULD1101E Data Sheet

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Part Number:
BULD1101E
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

High voltage capability
Low spread of dynamic parameters
Minimum lot-to-lot spread for reliable operation
Very high switching speed
In compliance with the 2002/93/EC European Directive




Application

Electronic ballast for fluorescent lighting


Specifications

Symbol
Parameter
Value
Unit
VCES
 Collector-emitter voltage (VBE = 0)
1100
V
VCEO
 Collector-emitter voltage (IB = 0)
450
V
VEBO
 Emitter-base voltage (IC = 0)
12
V
IC
 Collector current
3
A
ICM
 Collector peak current (tP < 5ms)
6
IB
 Base current
1.5
A
IBM
 Base peak current (tP < 5ms)
3
A
Ptot
 Total dissipation at Tc = 25°C
35
W
Tstg
 Storage temperature
-65 to 150
°C
TJ
 Max. operating junction temperature
150
°C



Description

BULD1101E is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and high voltage capability.

Thanks to an increased intermediate layer, BULD1101E has an intrinsic ruggedness which enables the transistor to withstand an high collector current level during breakdown condition, without using the transil protection usually necessary in typical converters for lamp ballast.




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