BUL38D

Transistors Bipolar (BJT) NPN Hi-Volt Fast Sw

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SeekIC No. : 00204577 Detail

BUL38D: Transistors Bipolar (BJT) NPN Hi-Volt Fast Sw

floor Price/Ceiling Price

US $ .35~.56 / Piece | Get Latest Price
Part Number:
BUL38D
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $.56
  • $.49
  • $.39
  • $.35
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 450 V
Emitter- Base Voltage VEBO : 9 V Maximum DC Collector Current : 5 A
DC Collector/Base Gain hfe Min : 10 Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220 Packaging : Tube    

Description

Maximum Operating Frequency :
Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Packaging : Tube
Maximum DC Collector Current : 5 A
Package / Case : TO-220
DC Collector/Base Gain hfe Min : 10
Emitter- Base Voltage VEBO : 9 V
Collector- Emitter Voltage VCEO Max : 450 V


Features:

*STMicroelectronicsPREFERRED SALESTYPE
*HIGHVOLTAGECAPABILITY
*LOWSPREADOFDYNAMICPARAMETERS
*MINIMUMLOT-TO-LOTSPREADFOR RELIABLEOPERATION
*LOWBASE-DRIVEREQUIREMENTS
*VERYHIGHSWITCHINGSPEED
*FULLYCHARACTERISEDAT125
*HIGHRUGGEDNESS
*INTEGRATEDANTIPARALLEL COLLECTOR-EMITTERDIODE





Application

*ELECTRONICTRANSFORMERSFOR
HALOGENLAMPS
*SWITCHMODEPOWERSUPPLIES





Specifications

Symbol Parameter Value Unit
VCES Collector-Emitter Voltage (VBE= 0) 800 V
VCEO Collector-Emitter Voltage (IB= 0)
450 V
VEBO Emitter-Base Voltage (IC = 0) 9 V
IC Collector Current 5 V
ICM Collector Peak Current (tP<5 ms) 10 A
IB Base Current 2 A
IBM Base Peak Current (tP<5 ms) 4 A
Ptot Total Dissipation at Tc = 25 80 W
Tstg Storage Temperature -65 to 150
Tj Max. Operating Junction Temperature 150





Description

The BUL38D is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage withstand capability.

The BUL series BUL38D isdesigned for use in lighting applications and low costs witch-modepower supplies.




Parameters:

Technical/Catalog InformationBUL38D
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)450V
Current - Collector (Ic) (Max)10A
Power - Max80W
DC Current Gain (hFE) (Min) @ Ic, Vce10 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic700mV @ 400mA, 2A
Frequency - Transition-
Current - Collector Cutoff (Max)250A
Mounting TypeThrough Hole
Package / CaseTO-220-3 (Straight Leads)
PackagingTube
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names BUL38D
BUL38D
497 2581 5 ND
49725815ND
497-2581-5



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