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BUK475-200B

PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDSVDGR±VGS IDIDIDMPtotTstgTj Drain-source voltageDrain-gate voltageGate-source voltage Drain current(DC)Drain current(DC)Drain current (pulse peak value)Total power dissipationStroage temperatureJunction Tempe...

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BUK475-200B: PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDSVDGR±VGS IDIDIDMPtotTstgTj Drain-source voltageDrain-gate voltageGate-source voltage Drain current(DC)Drain...

BUK475-200B Data Sheet

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Part Number:
BUK475-200B
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Pinout

Connection Diagram


Specifications

SYMBOL PARAMETER CONDITIONS
MIN.
MAX.
UNIT

VDS
VDGR
±VGS

ID
ID
IDM
Ptot
Tstg
Tj

Drain-source voltage
Drain-gate voltage
Gate-source voltage

Drain current(DC)
Drain current(DC)
Drain current (pulse peak value)
Total power dissipation
Stroage temperature
Junction Temperature

-
RGS=20 k
-

Tmb=25
Tmb=100
Tmb=25
Tmb=25
-
-

-
-
-

-
-
-
-
-55
-

200
200
30

V
V
V

A
A
A
W

-200A
7.6
4.8
30

-200B
7
4.4
28

30
150
150




Description

N-channel enhancement mode field-effect power transistor BUK475-200B in a plastic full-pack envelope. BUK475-200B is intended foruse in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in general purpose switching applications.


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