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BUK436W-1000B

PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MIN. MIN. VDSVDGR±VGSIDIDIDMPtotTstgTj Drain-source voltageDrain-gate voltageGate-source voltage Drain current (DC)Drain current (DC)Drain current (pulse peak value)Total power dissipationStorage temperatureJunction Temper...

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BUK436W-1000B: PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MIN. MIN. VDSVDGR±VGSIDIDIDMPtotTstgTj Drain-source voltageDrain-gate voltageGate-source voltage Drain current (DC)Drain c...

BUK436W-1000B Data Sheet

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Part Number:
BUK436W-1000B
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/7

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Product Details

Description



Pinout

Connection Diagram


Specifications

SYMBOL PARAMETER CONDITIONS
MIN.
MIN.
MIN.

VDS
VDGR
±VGS
ID
ID
IDM
Ptot
Tstg
Tj

 Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage temperature
Junction Temperature		 -
RGS=20k
-
Ths = 25 °C
Ths = 100 °C
Ths = 25 °C
Ths = 25 °C
-
-

-
-
-
-
-
-
-
-55
-

1000
1000
30
3.1
2.0
12
125
150
150
V
V
V
A
A
A
W




Description

N-channel enhancement mode field-effect power transistor BUK436W-1000B in a plastic envelope.
BUK436W-1000B is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in general purpose switching applications.


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