FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) @ Vgs: 27nC @ 10V
Package / Case: 8-PowerTDFN
Current - Continuous Drain (Id) @ 25° C: 40A
Packaging: Cut Tape (CT)
Power - Max: 35W
Rds On (Max) @ Id, Vgs: 8 mOhm @ 20A, 10V
Manufacturer: Infineon Technologies
Series: OptiMOS™
Supplier Device Package: PG-TSDSON-8 (3.3x3.3)
Input Capacitance (Ciss) @ Vds: 2100pF @ 15V
Parameters: | Technical/Catalog Information | BSZ088N03MSG |
| Vendor | Infineon Technologies (VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 40A |
| Rds On (Max) @ Id, Vgs | 8 mOhm @ 20A, 10V |
| Input Capacitance (Ciss) @ Vds | 2100pF @ 15V |
| Power - Max | 35W |
| Packaging | Digi-Reel? |
| Gate Charge (Qg) @ Vgs | 27nC @ 10V |
| Package / Case | 8-TSDSON |
| FET Feature | Logic Level Gate |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | BSZ088N03MSG
BSZ088N03MSG
BSZ088N03MSGINDKR ND
BSZ088N03MSGINDKRND
BSZ088N03MSGINDKR
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BSZ088N03MSG Data Sheet
