BSZ018NE2LSIXT, US $ .55-.6 , Infineon Technologies, BSZ018NE2LSIXT DataSheet download, circuit diagram from SeekIC.com

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BSZ018NE2LSIXT: MOSFET OptiMOS Power MOSFET

BSZ018NE2LSIXT Data Sheet

US $ .55~.6 / Piece | Get Latest Price

Part Number:: BSZ018NE2LSIXT
Mfg:: Infineon Technologies
Supply Ability:: 5000

Price Break

Qty
0~3710
3710~5000
5000~10000

Unit Price
$.6
$.58
$.55

Processing time
15 Days
15 Days
15 Days

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Upload time: 2024/9/26

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Recent History
What is this?

BSZ018NE2LS evaluate
US $.52 - .56 / Piece

MOSFET N-KAN
BSZ018NE2LSI evaluate
US $.64 - 1.55 / Piece

MOSFET N-CH 25V 22A TSDSON-8
BSZ019N03LS evaluate
US $.52 - .56 / Piece

MOSFET N-Channel 30V MOSFET

Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	25 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	40 A
Resistance Drain-Source RDS (on) :	1.8 mOhms at 4.5 V	Configuration :	Single Quad Drain Triple Source
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	PG-TSDSON-8	Packaging :	Reel

Description

Transistor Polarity : N-Channel
Drain-Source Breakdown Voltage : 25 V
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Configuration : Single Quad Drain Triple Source
Continuous Drain Current : 40 A
Gate-Source Breakdown Voltage : +/- 20 V
Resistance Drain-Source RDS (on) : 1.8 mOhms at 4.5 V
Package / Case : PG-TSDSON-8

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BSZ018NE2LSIXT

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