BSZ018NE2LSI, US $ .64-1.55, BSZ018NE2LSI DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 003431522 Detail

BSZ018NE2LSI: MOSFET N-CH 25V 22A TSDSON-8

BSZ018NE2LSI Data Sheet

US $ .64~1.55 / Piece | Get Latest Price

Part Number:: BSZ018NE2LSI
Mfg:
Supply Ability:: 5000

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$1.55
$1.33
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$.84
$.71
$.64

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Upload time: 2024/12/22

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Product Details

Quick Details

Series:	OptiMOS™	Manufacturer:	Infineon Technologies
FET Type:	MOSFET N-Channel, Metal Oxide	Transistor Type:	-
Gain :	15.5 dB	Current - Collector (Ic) (Max):	-
FET Feature:	Logic Level Gate	Drain to Source Voltage (Vdss):	25V
Voltage - Collector Emitter Breakdown (Max):	-	Current - Continuous Drain (Id) @ 25° C:	40A
Vce Saturation (Max) @ Ib, Ic:	-	Current - Collector Cutoff (Max):	-
Rds On (Max) @ Id, Vgs:	1.8 mOhm @ 20A, 10V	DC Current Gain (hFE) (Min) @ Ic, Vce:	-
Vgs(th) (Max) @ Id:	2V @ 250µA	Gate Charge (Qg) @ Vgs:	36nC @ 10V
Frequency - Transition:	-	Input Capacitance (Ciss) @ Vds:	2500pF @ 12V
Power - Max:	69W	Mounting Type:	Surface Mount
Package / Case:	8-PowerTDFN	Supplier Device Package:	PG-TSDSON-8 (3.3x3.3)

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)Alternate Packaging
Drain to Source Voltage (Vdss): 25V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) @ Vgs: 36nC @ 10V
Package / Case: 8-PowerTDFN
Current - Continuous Drain (Id) @ 25° C: 40A
Power - Max: 69W
Rds On (Max) @ Id, Vgs: 1.8 mOhm @ 20A, 10V
Manufacturer: Infineon Technologies
Series: OptiMOS™
Supplier Device Package: PG-TSDSON-8 (3.3x3.3)
Input Capacitance (Ciss) @ Vds: 2500pF @ 12V

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BSZ018NE2LSI

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