Features: · Direct interface to C-MOS, TTL, etc.· High-speed switching· No secondary breakdown.Application· Line current interrupter in telephone sets· Relay, high-speed and line transformer drivers.Specifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage (D...
BST76A: Features: · Direct interface to C-MOS, TTL, etc.· High-speed switching· No secondary breakdown.Application· Line current interrupter in telephone sets· Relay, high-speed and line transformer drivers...
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SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
VDS | drain-source voltage (DC) | - | 180 | V | |
VDS(SM) | drain-source voltage | non-repetitive peak; tp 2 mS | - | 200 | V |
VGSO | gate-source voltage (DC) | open drain | - | ±20 | V |
ID | drain current (DC) | - | 300 | mA | |
IDM | peak drain current | - | 800 | A | |
Ptot | total power dissipation | Tamb 25 ; note 1 | - | 1 | W |
Tstg | storage temperature | -65 | +150 | ||
Tj | junction temperature | - | 150 |
N-channel enhancement mode vertical D-MOS transistor BST76A in a SOT54 (TO-92) variant package.