Features: · Very low RDS(on)· Direct interface to C-MOS, TTL,etc.· High-speed switching· No second breakdownSpecifications Drain-source voltage VDS max. 80V Gate-source voltage (open drain) ±VGSO max. 20 V Drain current (DC) ID max. 0.5 mA Drain current (peak) IDM max. 1....
BST70A: Features: · Very low RDS(on)· Direct interface to C-MOS, TTL,etc.· High-speed switching· No second breakdownSpecifications Drain-source voltage VDS max. 80V Gate-source voltage (open drai...
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Drain-source voltage | VDS | max. | 80V |
Gate-source voltage (open drain) | ±VGSO | max. | 20 V |
Drain current (DC) | ID | max. | 0.5 mA |
Drain current (peak) | IDM | max. | 1.0 mA |
Total power dissipation up to Tamb = 25 (note 1) | Ptot | max. | 1 W |
Storage temperature range | Tstg | -65 to + 150 | |
Junction temperature | Tj | max. | 150 |
THERMAL RESISTANCE | |||
From junction to ambient (note 1) | Rth j-a | = | 125 K/W |
N-channel enhancement mode vertical D-MOS transistor BST70A in TO-92 variant envelope and intended for use in relay, high-speed and line-transformer drivers.