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BST70A

Features: · Very low RDS(on)· Direct interface to C-MOS, TTL,etc.· High-speed switching· No second breakdownSpecifications Drain-source voltage VDS max. 80V Gate-source voltage (open drain) ±VGSO max. 20 V Drain current (DC) ID max. 0.5 mA Drain current (peak) IDM max. 1....

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SeekIC No. : 004302446 Detail

BST70A: Features: · Very low RDS(on)· Direct interface to C-MOS, TTL,etc.· High-speed switching· No second breakdownSpecifications Drain-source voltage VDS max. 80V Gate-source voltage (open drai...

BST70A Data Sheet

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Part Number:
BST70A
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· Very low RDS(on)
· Direct interface to C-MOS, TTL,etc.
· High-speed switching
· No second breakdown


Specifications

Drain-source voltage VDS max. 80V
Gate-source voltage (open drain) ±VGSO max. 20 V
Drain current (DC) ID max. 0.5 mA
Drain current (peak) IDM max. 1.0 mA
Total power dissipation up to Tamb = 25 (note 1) Ptot max. 1 W
Storage temperature range Tstg -65 to + 150
Junction temperature Tj max. 150
THERMAL RESISTANCE
From junction to ambient (note 1) Rth j-a = 125 K/W
Note
1. Transistor mounted on printed circuit board, max. lead length 4 mm, mounting pad for drain lead min. 10 mm*10 mm.


Description

N-channel enhancement mode vertical D-MOS transistor BST70A in TO-92 variant envelope and intended for use in relay, high-speed and line-transformer drivers.




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