Features: · Direct interface to C-MOS, TTL,etc.· High-speed switching· No second breakdownSpecifications Drain-source voltage VDS max. 200V Gate-source voltage (open drain) VGSO max. 20 V Drain current (DC) ID max. 250 mA Drain current (peak) IDM max. 800 mA Total powe...
BST74A: Features: · Direct interface to C-MOS, TTL,etc.· High-speed switching· No second breakdownSpecifications Drain-source voltage VDS max. 200V Gate-source voltage (open drain) VGSO max. 2...
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Drain-source voltage | VDS | max. | 200V |
Gate-source voltage (open drain) | VGSO | max. | 20 V |
Drain current (DC) | ID | max. | 250 mA |
Drain current (peak) | IDM | max. | 800 mA |
Total power dissipation up to Tamb = 25 (note 1) | Ptot | max. | 1W |
Storage temperature range | Tstg | -65 to + 150 | |
Junction temperature | Tj | max. | 150 |
THERMAL RESISTANCE | |||
From junction to ambient (note 1) | Rth j-a | = | 125K/W |
Note
1. Transistor mounted on printed circuit board, max. lead length 4 mm, mounting pad for collector lead min. 10 mm * 10 mm.
N-channel enhancement mode vertical D-MOS transistor BST74A in TO-92 variant envelope and designed for use as line current interrupter in telephone sets and for application in relay, high-speed and line-transformer drivers.