BST72A

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Drain-Source Breakdown Voltage : 100 V
Maximum Operating Temperature : + 150 C
Packaging : Bulk
Continuous Drain Current : 0.19 A
Resistance Drain-Source RDS (on) : 10000 mOhms at 5 V
Package / Case : SOT-54


Features:

· Direct interface to C-MOS, TTL,etc.
· High-speed switching
· No second breakdown


Specifications

Drain-source voltage	VDS	max.	80V
Drain-source voltage (non-repetitive peak; tp 2 ms)	VDS(SM)		100V
Gate-source voltage (open drain)	VGSO	max.	20 V
Drain current (DC)	ID	max.	300 mA
Drain current (peak)	IDM	max.	600 mA
Total power dissipation up to Tamb = 25 (note 1)	Ptot	max.	0.83W
Storage temperature range	Tstg	-65 to + 150
Junction temperature	Tj	max.	150
THERMAL RESISTANCE
From junction to ambient (note 1)	Rth j-a	=	150K/W

Note
1. Transistor mounted on printed circuit board, max. lead length 4 mm.


Description

N-channel enhancement mode vertical D-MOS transistor BST72A in TO-92 variant envelope and designed for use in telephone ringer circuits and for application with relay, high-speed and line-transformer drivers.