MOSFET BULK MOSFET
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 100 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 0.19 A | ||
Resistance Drain-Source RDS (on) : | 10000 mOhms at 5 V | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SOT-54 | Packaging : | Bulk |
Drain-source voltage | VDS | max. | 80V |
Drain-source voltage (non-repetitive peak; tp 2 ms) | VDS(SM) | 100V | |
Gate-source voltage (open drain) | VGSO | max. | 20 V |
Drain current (DC) | ID | max. | 300 mA |
Drain current (peak) | IDM | max. | 600 mA |
Total power dissipation up to Tamb = 25 (note 1) | Ptot | max. | 0.83W |
Storage temperature range | Tstg | -65 to + 150 | |
Junction temperature | Tj | max. | 150 |
THERMAL RESISTANCE | |||
From junction to ambient (note 1) | Rth j-a | = | 150K/W |
N-channel enhancement mode vertical D-MOS transistor BST72A in TO-92 variant envelope and designed for use in telephone ringer circuits and for application with relay, high-speed and line-transformer drivers.