Features: · Low current (max. 200 mA)· High voltage (max. 300 V).Application· General purpose switching and amplification.Specifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltageBST15BST16 open emitter -- -200-350 VV VCEO collector-emitter voltage...
BST16: Features: · Low current (max. 200 mA)· High voltage (max. 300 V).Application· General purpose switching and amplification.Specifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO ...
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SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
VCBO | collector-base voltage BST15 BST16 |
open emitter | - - |
-200 -350 |
V V |
VCEO | collector-emitter voltage BST15 BST16 |
open base | - - |
-200 -300 |
V V |
VEBO | emitter-base voltage BST15 BST16 |
open collector | - | -4 -6 |
V V |
IC | collector current (DC) | - | -200 | mA | |
ICM | peak collector current | - | -400 | mA | |
IBM | peak base current | - | -200 | mA | |
Ptot | total power dissipation | Tamb 25 °C; note 1 | - | 1.3 | W |
Tstg | storage temperature | -65 | +150 | ||
Tj | junction temperature | - | 150 | ||
Tamb | operating ambient temperature | -65 | +150 |
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm2.
For other mounting conditions, see "Thermal considerations for SOT89 in the General Part of associated Handbook
The BST16 features are as follows:
PNP high-voltage transistor in a SOT89 plastic package.
NPN complements: BST39 and BST40.