BST120 Selling Leads, Price trend, BST120 DataSheet download, circuit diagram from SeekIC.com

Features: · Very low RDS(on)· Direct interface to C-MOS· High-speed switching· No second breakdownSpecifications Drain-source voltage -VDS max. 60 V Gate-source voltage (open drain) ±VGSO max. 20 V Drain current (DC) -ID max. 0.3 A Drain current (peak) -IDM max. 0.8 A ...

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SeekIC No. : 004302434 Detail

BST120: Features: · Very low RDS(on)· Direct interface to C-MOS· High-speed switching· No second breakdownSpecifications Drain-source voltage -VDS max. 60 V Gate-source voltage (open drain) ±VGS...

BST120 Data Sheet

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Part Number:: BST120
Supply Ability:: 5000

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Upload time: 2024/11/24

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Product Details

Description

Features:

· Very low R_DS(on)· Direct interface to C-MOS
· High-speed switching
· No second breakdown

Specifications

Drain-source voltage	-V_DS	max.	60 V
Gate-source voltage (open drain)	±V_GSO	max.	20 V
Drain current (DC)	-I_D	max.	0.3 A
Drain current (peak)	-I_DM	max.	0.8 A
Total power dissipation up to T_amb= 25 (note 1)	P_tot	max.	1 W
Storage temperature range	T_stg	-65 to + 150
Junction temperature	T_j	max.	150
THERMAL RESISTANCE
From junction to ambient (note 1)	R_{th j-a}	=	125 K/W

Note
1. Transistor mounted on ceramic substrate: area = 2,5 cm²and thickness = 0,7 mm.

Description

P-channel vertical D-MOS transistor BST120 in SOT89 envelope and intended for use in relay, high-speed and line-transformer drivers, using SMD technology.

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BST120

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