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BSS 295

Features: • N channel• Enhancement mode• Logic Level• VGS(th) = 0.8...2.0VSpecifications Parameter Symbol Value Unit Drain source voltage VDS 50 V Drain-gate voltage RGS = 20 k VDGR 50 V Gate source voltage VGS ± 20 V ESD...

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BSS 295: Features: • N channel• Enhancement mode• Logic Level• VGS(th) = 0.8...2.0VSpecifications Parameter Symbol Value Unit Drain source voltage VDS 50 V ...

BSS 295 Data Sheet

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Part Number:
BSS 295
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

Description



Features:

• N channel
• Enhancement mode
• Logic Level
• VGS(th) = 0.8...2.0V


Specifications

Parameter
Symbol
Value
Unit
Drain source voltage
VDS
50
V
Drain-gate voltage RGS = 20 k
VDGR
50
V
Gate source voltage
VGS
± 20
V
ESD Sensitivity (HBM) as per MIL-STD 883
Class 1
V
Continuous drain current TA = 24 °C
ID
1.4
A
DC drain current, pulsed TA = 25 °C
IDpuls
5.6
A
Power dissipation TA = 25 °C
Ptot
1
W
Chip or operating temperature
Tj
-55 ... + 150
°C
Storage temperature
Tstg
-55 ... + 150
°C
Thermal resistance, chip to ambient air 1)
RthJA
125
K/W
DIN humidity category, DIN 40 040
E
IEC climatic category, DIN IEC 68-1
55 / 150 / 56



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