Features: · VDS 250 V· ID 0.04 A· RDS(on) 100 W· N channel· Depletion mode· High dynamic resistance· Available grouped in VGS(th)Specifications Parameter Symbol Value Unit Drain source voltage VDS 250 V Drain-gate voltage RGS = 20 k VDGR 250 V Gate source v...
BSS 139: Features: · VDS 250 V· ID 0.04 A· RDS(on) 100 W· N channel· Depletion mode· High dynamic resistance· Available grouped in VGS(th)Specifications Parameter Symbol Value Unit Drain sou...
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Parameter |
Symbol |
Value |
Unit |
Drain source voltage |
VDS |
250 |
V |
Drain-gate voltage RGS = 20 k |
VDGR |
250 |
V |
Gate source voltage |
VGS |
± 14 |
V |
Gate-source peak voltage,aperiodic |
Vgs |
± 20 |
V |
Continuous drain current TA = 25 °C |
ID |
0.04 |
A |
DC drain current, pulsed TA = 25 °C |
IDpuls |
0.12 |
A |
Power dissipation TA = 25 °C |
Ptot |
0.36 |
W |
Operating and storage temperature range |
Tj, Tstg |
55 . + 150 |
°C |
Thermal resistance chip-ambient |
RthJA |
350 |
K/W |
(without heat sink) chip-solderingpoint |
RthJS |
350 |
K/W |
DIN humidity category, DIN 40 040 |
E |
||
IEC climatic category, DIN IEC 68-1 |
55 / 150 / 56 |