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BLT50

Features: * SMD encapsulation* Gold metallization ensures excellent reliability.PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter 20 V VCES collector-emitter voltage open base 10 V VEBO emitter-base voltage o...

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SeekIC No. : 004300653 Detail

BLT50: Features: * SMD encapsulation* Gold metallization ensures excellent reliability.PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitte...

BLT50 Data Sheet

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Part Number:
BLT50
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

* SMD encapsulation
* Gold metallization ensures excellent reliability.


Pinout

Connection Diagram


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter 20 V
VCES collector-emitter voltage open base  10 V
VEBO emitter-base voltage open collector 3 V
IC,IC(AV) collector current DC or average value 500 A
ICM peak collector current peak value f > 1 MHz 1.5 A
Ptot total power dissipation f > 1 MHz;Ts = 103 °C
(note 1)		 2 W
Tstg storage temperature -65 +150
Tj operating junction temperature 175



Description

NPN silicon planar epitaxial transistor BLT50 encapsulated in a SOT223 surface mounted envelope and designed primarily for use in hand-held radio equipment in the 470 MHz communications band.


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