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BLS6G3135-120,112

Transistors RF MOSFET Power LDMOS TNS

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BLS6G3135-120,112: Transistors RF MOSFET Power LDMOS TNS

BLS6G3135-120,112 Data Sheet

floor Price/Ceiling Price

US $ 229.43~231.22 / Piece | Get Latest Price
Part Number:
BLS6G3135-120,112
Mfg:
NXP Semiconductors
Supply Ability:
5000

Price Break

  • Qty
  • 0~16
  • 16~25
  • Unit Price
  • $231.22
  • $229.43
  • Processing time
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Quick Details

Configuration : Single Transistor Polarity : N-Channel
Frequency : 3.1 GHz to 3.5 GHz Gain : 11 dB
Output Power : 120 W Drain-Source Breakdown Voltage : 60 V
Continuous Drain Current : 7.2 A Gate-Source Breakdown Voltage : 13 V
Maximum Operating Temperature : + 150 C Package / Case : SOT-502A
Packaging : Tube    

Description

Configuration : Single
Transistor Polarity : N-Channel
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : 13 V
Output Power : 120 W
Gain : 11 dB
Package / Case : SOT-502A
Drain-Source Breakdown Voltage : 60 V
Frequency : 3.1 GHz to 3.5 GHz
Continuous Drain Current : 7.2 A


Parameters:

Technical/Catalog InformationBLS6G3135-120,112
VendorNXP Semiconductors
CategoryDiscrete Semiconductor Products
Transistor TypeLDMOS
Voltage - Rated 60V
Current Rating7.2A
Package / Case2-LDMOST, SOT502A
PackagingTray
Drawing Number568; SOT502; ;
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names BLS6G3135 120,112
BLS6G3135120,112



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