BLS6G3135-120,112, US $ 229.43-231.22 , NXP Semiconductors, BLS6G3135-120,112 DataSheet download, circuit diagram from SeekIC.com

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BLS6G3135-120,112: Transistors RF MOSFET Power LDMOS TNS

BLS6G3135-120,112 Data Sheet

US $ 229.43~231.22 / Piece | Get Latest Price

Part Number:: BLS6G3135-120,112
Mfg:: NXP Semiconductors
Supply Ability:: 5000

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$231.22
$229.43

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15 Days

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US $182.89 - 189.2 / Piece

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Product Details

Quick Details

Configuration :	Single	Transistor Polarity :	N-Channel
Frequency :	3.1 GHz to 3.5 GHz	Gain :	11 dB
Output Power :	120 W	Drain-Source Breakdown Voltage :	60 V
Continuous Drain Current :	7.2 A	Gate-Source Breakdown Voltage :	13 V
Maximum Operating Temperature :	+ 150 C	Package / Case :	SOT-502A
Packaging :	Tube

Description

Configuration : Single
Transistor Polarity : N-Channel
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : 13 V
Output Power : 120 W
Gain : 11 dB
Package / Case : SOT-502A
Drain-Source Breakdown Voltage : 60 V
Frequency : 3.1 GHz to 3.5 GHz
Continuous Drain Current : 7.2 A

Parameters:

Technical/Catalog Information	BLS6G3135-120,112
Vendor	NXP Semiconductors
Category	Discrete Semiconductor Products
Transistor Type	LDMOS
Voltage - Rated	60V
Current Rating	7.2A
Package / Case	2-LDMOST, SOT502A
Packaging	Tray
Drawing Number	568; SOT502; ;
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	BLS6G3135 120,112 BLS6G3135120,112

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