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BLS6G2731-6G

Transistors RF MOSFET Power 6W, 2.7-3.1GHz Radar Appl.

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SeekIC No. : 00220350 Detail

BLS6G2731-6G: Transistors RF MOSFET Power 6W, 2.7-3.1GHz Radar Appl.

BLS6G2731-6G Data Sheet

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Part Number:
BLS6G2731-6G
Mfg:
NXP Semiconductors
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/10/19

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Product Details

Quick Details

Configuration : Single Transistor Polarity : N-Channel
Drain-Source Breakdown Voltage : 60 V Continuous Drain Current : 3.5 A
Gate-Source Breakdown Voltage : 13 V Maximum Operating Temperature : + 150 C
Package / Case : SOT975C Packaging : Bulk    

Description

Frequency :
Gain :
Output Power :
Configuration : Single
Transistor Polarity : N-Channel
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : 13 V
Packaging : Bulk
Drain-Source Breakdown Voltage : 60 V
Continuous Drain Current : 3.5 A
Package / Case : SOT975C


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