Transistors RF MOSFET Power LDMOS TNS
BLS6G2731-120,112: Transistors RF MOSFET Power LDMOS TNS
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Transistors RF MOSFET Power Trans MOSFET N-CH 60V 3.5A 3-Pin
Configuration : | Single | Transistor Polarity : | N-Channel | ||
Drain-Source Breakdown Voltage : | 60 V | Continuous Drain Current : | 33 A | ||
Gate-Source Breakdown Voltage : | 13 V | Maximum Operating Temperature : | + 150 C | ||
Package / Case : | SOT502B | Packaging : | Tube |
Technical/Catalog Information | BLS6G2731-120,112 |
Vendor | NXP Semiconductors |
Category | Discrete Semiconductor Products |
Transistor Type | N-Channel |
Voltage - Rated | 60V |
Current Rating | 7.2A |
Package / Case | 2-LDMOST, SOT502A |
Packaging | Bulk |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | BLS6G2731 120,112 BLS6G2731120,112 |