Transistors RF MOSFET Power LDMOS TNS
BLF3G21-30,112: Transistors RF MOSFET Power LDMOS TNS
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Configuration : | Single | Transistor Polarity : | N-Channel | ||
Drain-Source Breakdown Voltage : | 65 V | Continuous Drain Current : | 4.5 A | ||
Gate-Source Breakdown Voltage : | +/- 15 V | Maximum Operating Temperature : | + 150 C | ||
Package / Case : | LDMOST-3 | Packaging : | Tube |
Technical/Catalog Information | BLF3G21-30,112 |
Vendor | NXP Semiconductors |
Category | Discrete Semiconductor Products |
Transistor Type | LDMOS |
Voltage - Rated | 26V |
Current Rating | 3uA |
Package / Case | 2-LDMOST, SOT467C |
Packaging | Tray |
Drawing Number | 568; SOT467; ; |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | BLF3G21 30,112 BLF3G2130,112 568 2413 ND 5682413ND 568-2413 |